Tungsten Heating elements

Parameters

Sapphire crystal growth furnace thermal field: large size manufacturing capacity.

Diameter	Length	Purity	Density	Service temp	Vapor pressure	blackness	Coefficient of thermal expansion
3-100mm	3~3000mm	99.95%	19.2g/cm3 min.	3400 ℃	10^-6Pa	0.295	4.98*10^-6

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High melting point (3410°C)

Low thermal expansion

High electrical resistance

Low vapour pressure

Good thermal conductivity

High density

Atomic number	74
CAS number	7440-33-7
Atomic mass	183.84 [g/mol]
Melting point	3420 °C
Boiling point	5555 °C
Density at 20 °C	19.25 [g/cm³]
Crystal structure	Body-centered cubic
Coefficient of linear thermal expansion at 20 °C	4.4 × 10^-6 [m/(mK)]
Thermal conductivity at 20 °C	164 [W/(mK)]
Specific heat at 20 °C	0.13 [J/(gK)]
Electrical conductivity at 20 °C	18.2 × 10⁶ [S/m]
Specific electrical resistance at 20 °C	0.055 [(Ωmm²)/m]

sapphire furnaces